Description
Product Overview
The 2N2907A is a silicon PNP low‑power transistor manufactured by BG282, supplied in a convenient 100‑piece bulk pack. Each device is housed in a TO‑92 package measuring approximately 5.31 x 3.31 x 0.47 inches for the entire pack, with an individual weight of just 0.63 ounces. Designed for a maximum collector current of 0.6 A and a collector‑emitter voltage rating of 60 V, this transistor provides reliable switching and amplification capabilities across a wide range of electronic applications. Its current‑gain bandwidth product (ft) starts at a minimum of 200 MHz, ensuring fast response times and stable operation even in high‑frequency environments. The component is complemented by the popular 2N2222A NPN transistor, allowing designers to create complementary push‑pull circuits with ease. The transistors are packaged in an ESD‑transparent bag, protecting them from static discharge while offering easy access for inventory management.
Usage
These PNP transistors are well‑suited for hobbyist projects, educational labs, and professional industrial equipment. Typical use cases include low‑power switching regulators, audio amplifiers, signal conditioning stages, and driver circuits for small motors or relays. Their compact TO‑92 form factor makes them ideal for breadboard prototyping as well as surface‑mount applications when paired with appropriate adapters. Engineers designing power‑efficient devices appreciate the low saturation voltage and fast turn‑off characteristics, which help reduce heat dissipation in dense circuit layouts. The 100‑piece quantity ensures that developers have enough units for iterative testing, batch production, and spare parts inventory, minimizing downtime during product development cycles.
Why Choose Us
Choosing the BG282 2N2907A means selecting a component that combines proven reliability with competitive pricing. Each transistor undergoes rigorous quality control to meet industry standards for performance and durability. The bulk packaging reduces per‑unit cost while the ESD‑transparent bag safeguards the devices during shipping and storage. Our customers benefit from a transparent best‑seller ranking (#56 in BJT Transistors) and a flawless 5‑star rating based on verified reviews, reflecting consistent satisfaction across a diverse user base. Although we do not provide direct technical support, comprehensive datasheets and application notes are readily available, empowering users to integrate the transistor confidently into their designs.
Key Features
- High current gain and 200 MHz ft ensure fast, reliable switching for modern circuits.
- Compact TO‑92 package saves board space and simplifies thermal management.
- Robust 0.6 A / 60 V ratings provide flexibility for both low‑power and medium‑power applications.
- ESD‑transparent storage bag protects against static damage while allowing easy inventory handling.
- Backed by a 5‑star customer rating and top‑ranking in BJT transistor categories, guaranteeing quality.
FAQ
What is the maximum power dissipation for the 2N2907A?
The transistor can dissipate up to 625 mW when mounted on a standard TO‑92 heat sink, provided that the ambient temperature does not exceed 25 °C.
Can the 2N2907A be used in high‑frequency oscillator circuits?
Yes, with a minimum ft of 200 MHz, the device performs well in oscillator designs up to several megahertz, delivering stable amplitude and phase characteristics.
Is the bulk pack suitable for automated pick‑and‑place assembly?
While the individual TO‑92 packages are compatible with standard pick‑and‑place equipment, the bulk bag is intended for manual handling; for automated lines, consider ordering the components in reel format.
How does the 2N2907A complement the 2N2222A NPN transistor?
Both transistors share similar voltage and current ratings, allowing designers to create complementary push‑pull stages that improve linearity and efficiency in audio and power‑amplifier circuits.
What precautions should be taken to avoid reliability issues?
Do not exceed the absolute maximum ratings for extended periods, and ensure proper heat sinking in high‑current applications to maintain long‑term device reliability.





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